1/6 ? x02 series sensitive 1.25a scrs september 2000 - ed: 3 main features: description thanks to highly sensitive triggering levels, the x02 scr series is suitable for all applications where the available gate current is limited, such as ground fault circuit interruptors, overvoltage crowbar protection in low power supplies, capacitive ignition circuits, ... available in though-hole or surface-mount packages, these devices are optimized in forward voltage drop and inrush current capabilities, for reduced power losses and high reliability in harsh environments. symbol value unit i t(rms) 1.25 a v drm /v rrm 600 and 800 v i gt 50 to 200 m a absolute ratings (limiting values) symbol parameter value unit i t(rms) rms on-state current (180 conduction angle) to-92 ti = 55 c 1.25 a sot-223 ttab = 95 c it (av) average on-state current (180 conduction angle) to-92 ti = 55 c 0.8 a sot-223 ttab = 95 c i tsm non repetitive surge peak on-state current tp = 8.3 ms tj = 25 c 25 a tp = 10 ms 22.5 i ti t value for fusing tp = 10 ms tj = 25 c 2.5 a 2 s di/dt critical rate of rise of on-state current i g =2xi gt ,tr 100 ns f = 60 hz tj = 125 c50 a/ m s i gm peak gate current tp = 20 m s tj = 125 c 1.2 a p g(av) average gate power dissipation tj = 125 c 0.2 w t stg tj storage junction temperature range operating junction temperature range - 40 to + 150 - 40 to + 125 c g a k to-92 (x02xxa) sot-223 (x02xxn)
x02 series 2/6 electrical characteristics (tj = 25 c, unless otherwise specified) thermal resistances s = copper surface under tab product selector symbol test conditions x02xx unit 02 05 i gt v d =12v r l = 140 w min. - 20 m a max. 200 50 v gt max. 0.8 v v gd v d =v drm r l = 3.3 k w r gk =1k w tj = 125 c min. 0.1 v v rg i rg =10 m a min. 8v i h i t =50ma r gk =1k w max. 5 ma i l i g = 1 ma r gk =1k w max. 6 ma dv/dt v d =67%v drm r gk =1k w tj = 110 c min. 10 15 v/ m s v tm i tm = 2.5 a tp = 380 m s tj = 25 c max. 1.45 v v to threshold voltage tj = 125 c max. 0.9 v r d dynamic resistance tj = 125 c max. 200 m w i drm i rrm v drm =v rrm r gk =1k w tj = 25 cmax. 5 m a tj = 125 c500 symbol parameter value unit r th(j-l) junction to leads (dc) to-92 60 c/w r th(j-t) junction to tab (dc) sot-223 25 r th(j-a) junction to ambient (dc) to-92 150 s=5cm sot-223 60 part number voltage sensitivity package 600 v 800 v x0202ma x 200 m a to-92 x0202mn x 200 m a sot-223 X0202NA x 200 m a to-92 x0202nn x 200 m a sot-223 x0205ma x 50 m a to-92 x0205mn x 50 m a sot-223 x0205na x 50 m a to-92 x0205nn x 50 m a sot-223
x02 series 3/6 ordering information other information note : xx = sensitivity, y = voltage part number marking weight base quantity packing mode x02xxya 1ba2 x02xxya 0.2 g 2500 bulk x02xxya 2bl2 x02xxya 0.2 g 2000 ammopack x0202yn 5ba4 x2y 0.12 g 1000 tape & reel x0205yn 5ba4 x5y 0.12 g 1000 tape & reel fig. 1: maximum average power dissipation versus average on-state current. fig. 2-1: average and d.c. on-state current versus lead temperature (sot-223/to-92). x0202 ma 1ba2 blank sensitive scr series current: 1.25a sensitivity: 02: 200 m a 05: 50 m a voltage: m: 600v n: 800v package: a:to-92 n: sot-223 packing mode: 1ba2:to-92 bulk 2bl2:to-92 ammopack 5ba4: sot-223 tape & reel p(w) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 it(av)(a) sot-223 sot-223 to-92 to-92 it(av)(a) 0.8 1.4 1.2 1.0 0.6 0.4 0.2 0.0 0 25 50 75 100 125 tlead or tlab( c)
x02 series 4/6 fig. 2-2: average and d.c. on-state current versus ambient temperature (device mounted on fr4 with recommended pad layout) (sot-223/ to-92). fig. 3: relative variation of thermal impedance junction to ambient versus pulse duration (sot-223/to-92). fig. 4: relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). fig. 5: relative variation of holding current versus gate-cathode resistance (typical values). fig. 6: relative variation of dv/dt immunity versus gate-cathode resistance (typical values). fig. 7: relative variation of dv/dt immunity versus gate-cathode capacitance (typical values). sot-223 sot-223 to-92 to-92 it(av)(a) 02550 75 100 125 0.8 1.4 1.2 1.0 0.6 0.4 0.2 0.0 tamb( c) 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.10 1.00 k = [zth(j-a)/rth(j-a)] tp(s) sot-223 to-92 w igt, ih, il[tj]/igt, ih, il[tj] = 25 c] 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -40 -20 0 20 40 60 80 100 120 140 tj( c) 1e-2 1e-1 1e+0 1e+1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ih[rgk] / ih[rgk = 1 k w ] tj = 25 c rgk(k w ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 tj = 125 c vd = 0.67xvdrm dv/dt[rgk]/dv/dt [ rgk=1k w ] rgk(k w ) dv/dt[cgk] / dv/dt[rgk = 1k ] w 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 cgk(nf)
x02 series 5/6 fig. 8: surge peak on-state current versus number of cycles. fig. 9: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of i t. fig. 10: on-state characteristics (maximum values). fig. 11: thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board fr4, copper thickness: 35 m m) (sot-223). 1 10 100 1000 0 5 10 15 20 25 itsm(a) nonrepetitive tjinitial=25 c repetitive t amb=25 c onecycle tp=10ms number of cycles itsm(a), i t(a s) 22 1.00 10.00 0.10 0.01 300 100 10 1 tp(ms) itm(a) vtm(v) 3e+1 1e+1 1e+0 1e-1 2.0 2.5 3.0 3.5 4.0 4.5 1.5 1.0 0.5 rth(j-a) ( c/w) s(cm ) 2 4.0 4.5 5.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 130 120 110 100 90 80 70 60 50 40 30 20 10 0 package mechanical data to-92 (plastic) d f a e b a c ref. dimensions millimeters inches min. typ. max. min. typ. max. a 1.35 0.053 b 4.70 0.185 c 2.54 0.100 d 4.40 0.173 e 12.70 0.500 f 3.70 0.146 a 0.50 0.019
x02 series 6/6 footprint dimensions (in millimeters) sot-223 (plastic) package mechanical data sot-223 (plastic) a a1 b e1 d b1 h e e c v ref. dimensions millimeters inches min. typ. max. min. typ. max. a 1.80 0.071 a1 0.02 0.1 0.0008 0.004 b 0.60 0.70 0.85 0.024 0.027 0.034 b1 2.90 3.00 3.15 0.114 0.118 0.124 c 0.24 0.26 0.35 0.009 0.010 0.014 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.3 0.090 e1 4.6 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 max information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2000 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companie s australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco singapore - spain - sweden - swit zerland - united kingdom http ://www.st.com
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